Symmetrical VTH/RON Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs

Abstract

We investigate the drift of threshold voltage (VTH) and on-resistance (RON) in p-GaN power HEMTs after being submitted to negative/positive gate stress. Negative (Positive) Gate Stress (NGS/PGS) was applied at a gate-to-source bias of |VNGS| = VPGS = 6 V up to a cumulative stress time of 8×10³ s at room temperature. We found that during NGS both VTH and RON increased over stress time, whereas during PGS both parameters decreased and stabilized to the values prior to stress application. This symmetric behavior was maintained after 5 full NGS/PGS stress cycles, indicating the absence of permanent degradation. To further characterize the VTH and RON transients, the NGS/PGS stress cycles were repeated at different temperatures (T=30-105 °C). While VTH exhibited a strong Τ-dependence (EA ≈ 0.6 eV) during NGS, a negligible variation of the VTH transients with T was found during PGS (EA ≈ 0 eV). Instead, RON transients exhibited approximately the same T-dependence during both NGS and PGS (EA ≈ 0.3-0.4 eV).