Improving the field emission property of zinc oxide by directly growing on graphene layer

Abstract

Zinc oxide was directly grown on the graphene layer by the hydrothermal synthesis method, and the field emission property of this hybrid structure was tested by a diode structure device. Compared with the Zinc oxide directly grown on the silicon substrates, the hybrid emitter shows better performance in the field emission properties, including low turn-on field, threshold field and high emission current. The results provide an efficient way to improve the field emission property of ZnO by using graphene layer.