Simulation of Purification Conditions and the Process of Growing Semiconductor Single Crystals by the Zone Melting Method

Abstract

The work is devoted to the creation of a virtual device in the LabVIEW environment, which allows simulating the process of zone melting depending on technological parameters. Methods for cleaning and growing single crystals by slowly moving a narrow melt zone along the length of a polycrystalline ingot of a solid material are considered, as a result of which, due to recrystallization, the impurities dissolved in the ingot are redistributed. The final distribution of impurities depends on their initial distribution, the number and width of the melt zones, and the direction of their movement. The virtual device is intended for use by students and teachers in distance learning and face-to-face mode.