N. Vostokov, D. G. Volgunov, V. F. Dryakhlushin, A. Klimov, V. Rogov, L. V. Sukhodoev, V. Shashkin
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引用次数: 0
Abstract
An atomic-force lithography method yielding individual elements of <100 nm size has been developed. It involves deformation of the masking layer with an atomic-force microscope probe, followed by plasma-chemical etching and deposition of metal contacts through the mask.