High-Q Silicon-Germanium Ring Resonator for On-Chip Sensing Applications in the Mid-Infrared

Optical Sensors and Sensing Congress 2022 (AIS, LACSEA, Sensors, ES) Pub Date : 1900-01-01 DOI:10.1364/es.2022.em1d.4

M. Perestjuk, Rémi Armand, A. D. Torre, M. Sinobad, A. Mitchell, A. Boes, J. Hartmann, J. Fédéli, V. Reboud, C. Monat, C. Grillet

引用次数: 0

Abstract

We report a high-Q ring resonator in a silicon-germanium on silicon chip-based platform for sensing applications in the mid-infrared. The side-coupled ring exhibits a loaded Q-factor of 90,000 at the operating wavelength around 4.18 µm.

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用于中红外片上传感的高q硅锗环形谐振器

我们报道了一种基于硅锗硅芯片的高q环谐振器，用于中红外传感应用。在工作波长约为4.18µm时，侧耦合环的负载q因子为90,000。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical Sensors and Sensing Congress 2022 (AIS, LACSEA, Sensors, ES)

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