A plastic package GaAs MESFET 5.8 GHz receiver front-end with on-chip matching for ETC system

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Pub Date : 1900-01-01 DOI:10.1109/RFIC.1999.805236

E. Low, H. Nakamura, H. Fujishiro, K. T. Yan

引用次数: 5

Abstract

A plastic package GaAs MESFET receiver front-end MMIC operating at 5.8 GHz is presented. It has a two stage LNA followed by a dual-gate mixer. Operating at 3 V and 8.3 mA, CG of 20.4 dB, NF of 4.1 dB, and high port-to-port isolations have been achieved. A 3 dB bandwidth of CG is 1 GHz.

查看原文本刊更多论文

用于ETC系统的片上匹配的塑料封装GaAs MESFET 5.8 GHz接收器前端

提出了一种工作频率为5.8 GHz的塑料封装GaAs MESFET接收机前端MMIC。它有一个两级LNA，后跟一个双门混频器。工作电压为3 V和8.3 mA, CG为20.4 dB, NF为4.1 dB，并实现了高端口到端口隔离。CG的3db带宽为1ghz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)

自引率

0.00%

发文量