P. Zarkesh-Ha, P. Wright, S. Lakshminarayanan, C. Cheng, W. Loh, W. Lynch
{"title":"Backend process optimization for 90 nm high-density ASIC chips","authors":"P. Zarkesh-Ha, P. Wright, S. Lakshminarayanan, C. Cheng, W. Loh, W. Lynch","doi":"10.1109/IITC.2003.1219731","DOIUrl":null,"url":null,"abstract":"Based on the marketing, methodology, and manufacturing requirements of ASIC products, an optimum back-end process for high-density ASIC chips in a 90 nm technology is proposed. The chip size for high-density ASIC chips has stayed roughly constant between 7 and 14 mm on a side. High-density chips are achieved with tight pitch for all routing levels. Optimum performance is obtained with a thinner metal 2 and 3 Cu thickness of 0.25 versus 0.35 /spl mu/m for the higher levels of metal.","PeriodicalId":212619,"journal":{"name":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2003.1219731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Based on the marketing, methodology, and manufacturing requirements of ASIC products, an optimum back-end process for high-density ASIC chips in a 90 nm technology is proposed. The chip size for high-density ASIC chips has stayed roughly constant between 7 and 14 mm on a side. High-density chips are achieved with tight pitch for all routing levels. Optimum performance is obtained with a thinner metal 2 and 3 Cu thickness of 0.25 versus 0.35 /spl mu/m for the higher levels of metal.