A HIGH OPERATING TEMPERATURE (HOT) MIDDLE WAVE INFRARED (MWIR) QUANTUM-DOT PHOTODETECTOR

Optics and Photonics Letters Pub Date : 2011-12-01 DOI:10.1142/S1793528811000196

J. Vaillancourt, Puminun Vasinajindakaw, Xuejun Lu

引用次数: 13

Abstract

In this paper, a high operating temperature (HOT) middle wave infrared (MWIR) InAs/GaAs quantum dot (QD) infrared photodetector (QDIP) is reported. The QDIP covers a wide detection spectrum range from 3 μm to 6 μm. A large photoresponsivity of 6.4 A/W at a low bias voltage of 0.5 V and a high peak specific photodetectivity D* of 6.0 × 107cmHz1/2/W were obtained at a high operating temperature of 230 K.

查看原文本刊更多论文

高工作温度(热)中波红外(mwir)量子点光电探测器

报道了一种高温(HOT)中波红外(MWIR) InAs/GaAs量子点(QD)红外光电探测器(QDIP)。QDIP的检测光谱范围为3 μm ~ 6 μm。在低偏置电压0.5 V下获得6.4 A/W的高光响应率，在230 K的高工作温度下获得6.0 × 107cmHz1/2/W的峰值比光探测率D*。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Optics and Photonics Letters

自引率

0.00%

发文量