Germanium field-effect transistors

Abstract

Part I offers a simple introduction to the field-effect transistor for those who are unfamiliar with the device. Standard device design equations are rewritten to emphasize effects of dimensional changes on d-c parameters. Failure mechanisms are discussed. Part II presents a method for overcoming effects of high leakage currents in FETs. A d-c feedback circuit (similar to one described by middlebrook1 for complementary transistors) is proposed and analyzed, and a practical design procedure and circuit are presented.