Optical static RAM cell using a monolithically integrated InP Flip-Flop and wavelength-encoded signals

2016 Optical Fiber Communications Conference and Exhibition (OFC) Pub Date : 2016-03-20 DOI:10.1364/OFC.2016.TU2K.7

S. Pitris, C. Vagionas, G. Kanellos, R. Kisacik, T. Tekin, R. Broeke, N. Pleros

引用次数: 2

Abstract

We experimentally demonstrate successful optical static RAM cell operation with READ/WRITE at 5Gbps and I/O wavelength diversity capabilities. The RAM cell incorporates an integrated SOA-MZI Access Gate and a monolithic InP Flip-Flop with coupled switches.

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光学静态RAM单元采用单片集成InP触发器和波长编码信号

我们通过实验成功地演示了具有5Gbps读/写和I/O波长分集能力的光学静态RAM单元操作。RAM单元包含集成SOA-MZI接入门和带耦合开关的单片InP触发器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 Optical Fiber Communications Conference and Exhibition (OFC)

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