A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 1900-01-01 DOI:10.1109/VLSI-TSA.2018.8403852

H. W. Cheng, E. Hsieh, Z. H. Huang, C. Chuang, C. Chen, F. L. Li, Y. Lo, C. H. Liu, S. Chung

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引用次数: 5

Abstract

A novel concept of OTP has been demonstrated to create another feasibility to allow re-writable capability before storing the data. This OTP is named Rewritable One-time- programming (RW-OTP) memory. With RW-OTP, users can do the test by modifying the contexts repeatedly before finalizing the stored data. To implement the memory cell, it consists of a gate-floated FinFET and an RRAM where a bilayer has been designed as a thicker dielectric layer with resistive-switching property on a thinner dielectric-fuse layer. Moreover, the process of RW-OTP is fully compatible with the state-of- the-art CMOS logic technology. The result shows that the memory cell exhibits high retention and good endurance. With proper use of RW-OTP, the users can not only reduce error jobs cost-efficiently but also can develop various applications for their needs. This memory cell is very promising for embedded applications.

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一种新型的可重写一次性编程OTP (RW-OTP)，采用介电保险丝RRAM器件实现，具有超高的可靠性保持和良好的耐用性，适用于嵌入式应用

一个新的OTP概念已经被证明可以创建另一种可行性，允许在存储数据之前实现可重写功能。这种OTP被命名为可重写一次性编程(RW-OTP)存储器。使用RW-OTP，用户可以在完成存储的数据之前反复修改上下文来进行测试。为了实现存储单元，它由一个栅极浮动FinFET和一个RRAM组成，其中双层被设计为在更薄的介电熔断层上具有更厚的电阻开关特性的介电层。此外，RW-OTP工艺完全兼容最先进的CMOS逻辑技术。结果表明，该记忆细胞具有较高的保留率和较好的耐久性。通过正确使用RW-OTP，用户不仅可以经济有效地减少错误作业，还可以根据需要开发各种应用程序。这种存储单元在嵌入式应用中非常有前途。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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