B. Parvais, C. Gustin, V. De Heyn, J. Loo, M. Dehan, V. Subramanian, A. Mercha, N. Collaert, R. Rooyackers, M. Jurczak, P. Wambacq, S. Decoutere
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引用次数: 21
Abstract
Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications below 10 GHz. The suitability of Fin varactors is evaluated and tradeoffs are given. An inductorless oscillator with large tuning range (1-8.5 GHz) for low-power wideband applications is demonstrated for the first time