Analysis of resistivity in nano-interconnect: full range (4.2-300 K) temperature characterization

Abstract

The characterisation of the damascene copper line resistivity as a function of linewidth and temperature were carried out for sub 100 nm feature size and down to 4.2 K. Mayadas model for grain boundary and sidewall scattering was used to analyse experimental data. The model is found to be in good agreement with experiment. The difficulty to isolate the different electron scattering mechanisms is highlighted. However. all the results show clearly that ITRS roadmap present requirement will not be respected in a close future.