A critical review of series resistances extraction methods in advanced bipolar transistors

Abstract

This paper gives a critical review of some of the most widely used series resistance extraction methods based essentially on static curves revealed by state-of-the-art bipolar transistors: polysilicon-emitter bipolar junction transistors (BJTs) with "normal" (Al) and TiSi/sub 2/ contacts. An unusual current-dependence of series resistances in polysilicon emitter transistors is also reported.