Robustness evaluation of finFET transistors under PVT variability

Abstract

This work provides a predictive evaluation of the impact that PVT variability causes on ON and OFF currents of FinFET transistors in technologies sub-22nm. Results show that the OFF current is the most impacted by all sources of variability. In terms of process variability effects, the LG and WFF variations cause the worst values to IOFF, especially for PFET and NFET devices, respectively. Voltage and temperature variations effects damage more the PFET devices.