Reflective interferometer for investigation of amplitude-phase characteristics of semiconductor nanostructures

Abstract

The reflective interferometer is suggested to use in measurements of spectral dependence of the phase of the reflectivity of mirrors, manufactured on a base of multi-layer semiconductor nanostructures. Interferometer is tested on the semiconductor mirror used to start the mode self-synchronization regime of the laser Nd3+:KGd(WO4)2. The technique can be applied to a wide variety of radiation wavelength, and it shows higher sensitivity of the phase characteristics measurement as compared to traditional two-beam interferometers.