Cryogenic Operational Amplifier on Complementary JFETs

2018 IEEE East-West Design & Test Symposium (EWDTS) Pub Date : 2018-09-01 DOI:10.1109/EWDTS.2018.8524640

O. Dvornikov, N. Prokopenko, A. Bugakova, V. Tchekhovski, I. Maliy

引用次数: 15

Abstract

Features of the design of operational amplifiers (Op-Amp) on complementary field effect transistors with p-n- junction (junction field-effect transistor, JFET) for operation under the influence of penetrating radiation (PR) and extremely low temperatures up to −197°C are considered. The original circuit of the Op-Amp and the results of its circuit simulation are given.

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互补型jfet的低温运算放大器

考虑了在穿透辐射(PR)和- 197°C的极低温度下工作的p-n结互补场效应晶体管(结场效应晶体管，JFET)上的运算放大器(Op-Amp)的设计特点。给出了运算放大器的原始电路及其电路仿真结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE East-West Design & Test Symposium (EWDTS)

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