Germanium gate phototransistor fabricated on SOI platform

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305933

V. Sorianello, G. De Angelis, A. De lacovo, L. Colace, S. Faralli, M. Romagnoli

引用次数: 0

Abstract

We report on the fabrication and characterization of a novel near infrared phototransistor provided with a germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.

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在SOI平台上制备锗栅光电晶体管

我们报告了一种新型近红外光电晶体管的制造和表征，该晶体管具有锗光栅，并通过市售硅光子代工厂制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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