High-Performance SLCFETs for Switched Filter Applications

J. Parke, R. Freitag, M. Torpey, R. Howell, E. Stewart, M. Snook, I. Wathuthanthri, Shalini Gupta, B. Nechay, M. King, P. Borodulin, K. Renaldo, H. G. Henry
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引用次数: 6

Abstract

FET-based switched filters do not occupy a large space in the literature due to the high loss of the switches relative to other technologies. The Super-Lattice Castellated Field Effect Transistor (SLCFET) is a low loss, high isolation, broadband RF switch that meets this need. A 4 channel tunable band pass filter employing SLCFET switches in a splitter/combiner network was fabricated in order to demonstrate the enabling capability of the SLCFET for this application. Each filter state employed a novel, high-Q LC circuit. The insertion loss of the MMIC passbands was around -6.5 dB, of which -1.3 dB was attributable to the six Single Pole Double Throw (SPDT) switches in the network. Breakout SPDTs were measured from 0.5 to 25 GHz. Measured insertion loss at 18 GHz was -0.41 ± 0.1 dB and isolation was -28.8 ± 0.1 dB, for 35 SPDTs on the wafer.
用于开关滤波器的高性能slcfet
由于与其他技术相比,基于fet的开关滤波器损耗高,因此在文献中没有占据很大的空间。超晶格场效应晶体管(SLCFET)是一种低损耗、高隔离的宽带射频开关,可以满足这种需求。为了演示SLCFET在该应用中的使能能力,制作了一个在分频/合并网络中使用SLCFET开关的4通道可调谐带通滤波器。每个滤波状态采用一种新颖的高q LC电路。MMIC通带的插入损耗约为-6.5 dB,其中-1.3 dB归因于网络中的6个单极双掷(SPDT)开关。分离spdt的测量范围从0.5 GHz到25 GHz。在该晶圆上的35个spdt,在18 GHz时测量的插入损耗为-0.41±0.1 dB,隔离度为-28.8±0.1 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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