Outlook for SiC devices in traction converters

Abstract

Silicon (Si) IGBTs are widely used in railway traction converters. In the near future, Silicon Carbide (SiC) technology will push the limits of switching devices in the three directions: higher blocking voltage, higher operating temperature and higher switching speed. All in all, these large-gap components should improve the traction chain efficiency and the power-weight ratio. Thus, the topology of the traction converter should be reconsidered from the input stage to the inverter including the DC bus. In this paper, the authors show the prospects for developments in traction voltage source inverters and active front end converters.