Property control methods of diamond-like silicon-carbon films for micro- and nanoelectronics

Abstract

Possible methods for controlling the properties of amorphous diamond-like silicon-carbon films are considered: physical or structural modification, chemical modification, and physical-chemical modification. It is shown that the method of physical modification allows controlling in a wide range the properties of diamond-like silicon-carbon films (electrophysical, mechanical properties and surface morphology) without changing the chemical composition of the material. Chemical modification was carried out by introducing transition metal into diamond-like silicon-carbon films. The dependences of the phase composition, electrophysical and mechanical properties on the content and type of metal are analyzed. The method of physical-chemical modification is considered, when the introduced impurity changes not only the chemical composition, but also the structure of the material.