Ultra-miniaturized lateral heterostructures in 2D semiconductors

Abstract

We present a novel technique for formation of sub-micron-sized lateral heterostructures in 2D semiconductors without fabrication complications of conventional approaches. We demonstrate the experimental formation of these heterostructures with unprecedented flexibility in shaping and sizing in different transition-metal dichalcogenides (TMDs). Some unique features include precise wafer-scale positioning with in-plane confinements well below 50 nm in mono-layer films. We discuss the possible challenges and opportunities in forming optoelectronic devices in this platform and comment on the extension of this approach to other classes of materials. This material platform can enable the long-sought quantum devices in atomically thin materials.