Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect

Abstract

New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.