A 2.5 ppm fully integrated CMOS analog TCXO

Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218) Pub Date : 2001-06-08 DOI:10.1109/FREQ.2001.956373

K. Nemoto, Kimiaki Sato

引用次数: 8

Abstract

A fully integrated CMOS analog TCXO IC that is suitable for cellular phone and other applications is presented. It was designed in a 1.0 /spl mu/m CMOS process with an embedded EEPROM and operates from 2.5 V to 5.5 V supply voltage and consumes 1.1 mA at a 3.0 V supply voltage. The chip area is 2.38/spl times/1.93 mm/sup 2/. The temperature stability is better than /spl plusmn/2.5 ppm over -30 to 85/spl deg/C. Measured phase noise is -115 dBc/Hz and -135 dBc/Hz at 100 Hz and 1 kHz offset, respectively.

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2.5 ppm完全集成的CMOS模拟TCXO

介绍了一种适用于手机等应用的全集成CMOS模拟TCXO集成电路。它采用1.0 /spl mu/m CMOS工艺设计，内置EEPROM，工作电压范围为2.5 V至5.5 V，供电电压为3.0 V时功耗为1.1 mA。芯片面积为2.38/spl倍/1.93 mm/sup 2/。在-30 ~ 85/spl℃范围内，温度稳定性优于/spl plusmn/2.5 ppm。在100hz和1khz偏置时，测得相位噪声分别为-115 dBc/Hz和-135 dBc/Hz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)

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