Integration of copper and fluorosilicate glass for 0.18 /spl mu/m interconnections

Abstract

The integration of dual damascene copper with fluorosilicate glass (FSC) at the 0.18 /spl mu/m technology node is described. The BEOL structure has been implemented for an advanced CMOS technology, and along with an SOI FEOL is being used for high performance logic and SRAM devices. Reliability and yield is shown to be equivalent to a similar technology without FSG. Key considerations in the development of this technology are presented.