Nonlinear Analysis and Structure Optimization of a DAR IMPATT Diode

Abstract

The analysis and optimization of the n+pvnp+ avalanche diode have been realized on basis of the nonlinear model and special optimization procedure. This type of the diode that was named as double avalanche region (DAR) IMPATT diode includes two avalanche regions inside the diode. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz and were optimized for the second frequency band near the 220 GHz.