{"title":"Simulation of carrier dynamics in graphene on a substrate at terahertz and mid-infrared frequencies","authors":"N. Sule, K. Willis, S. Hagness, I. Knezevic","doi":"10.1109/NUSOD.2012.6316524","DOIUrl":null,"url":null,"abstract":"We calculate the complex conductivity of graphene in the terahertz (THz) to mid-infrared (mid-IR) frequency range using a numerical simulation that couples the two-dimensional (2D) ensemble Monte Carlo technique (EMC) for carrier transport, the three-dimensional (3D) finite-difference time-domain (FDTD) technique for electrodynamics, and molecular dynamics (MD) for short range Coulomb interactions. We demonstrate the effect of the typically used silicon-dioxide substrate on the high-frequency carrier dynamics in graphene and show good agreement between recent experimental results and our numerical simulations.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2012.6316524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We calculate the complex conductivity of graphene in the terahertz (THz) to mid-infrared (mid-IR) frequency range using a numerical simulation that couples the two-dimensional (2D) ensemble Monte Carlo technique (EMC) for carrier transport, the three-dimensional (3D) finite-difference time-domain (FDTD) technique for electrodynamics, and molecular dynamics (MD) for short range Coulomb interactions. We demonstrate the effect of the typically used silicon-dioxide substrate on the high-frequency carrier dynamics in graphene and show good agreement between recent experimental results and our numerical simulations.