Simulation of carrier dynamics in graphene on a substrate at terahertz and mid-infrared frequencies

N. Sule, K. Willis, S. Hagness, I. Knezevic
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引用次数: 2

Abstract

We calculate the complex conductivity of graphene in the terahertz (THz) to mid-infrared (mid-IR) frequency range using a numerical simulation that couples the two-dimensional (2D) ensemble Monte Carlo technique (EMC) for carrier transport, the three-dimensional (3D) finite-difference time-domain (FDTD) technique for electrodynamics, and molecular dynamics (MD) for short range Coulomb interactions. We demonstrate the effect of the typically used silicon-dioxide substrate on the high-frequency carrier dynamics in graphene and show good agreement between recent experimental results and our numerical simulations.
在太赫兹和中红外频率的衬底上石墨烯载流子动力学模拟
我们使用数值模拟计算了石墨烯在太赫兹(THz)到中红外(中红外)频率范围内的复杂电导率,该数值模拟结合了载流子输运的二维(2D)系综蒙特卡罗技术(EMC)、电动力学的三维(3D)时域有限差分(FDTD)技术和短距离库仑相互作用的分子动力学(MD)技术。我们展示了典型使用的二氧化硅衬底对石墨烯中高频载流子动力学的影响,并在最近的实验结果和我们的数值模拟之间显示了良好的一致性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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