{"title":"Temperature characteristics of a new 100V rated power MOSFET, VLMOS (vertical LOCOS MOS)","authors":"M. Kodama, E. Hayashi, Y. Nishibe, T. Uesugi","doi":"10.1109/WCT.2004.239756","DOIUrl":null,"url":null,"abstract":"In this paper, we proposed a new 100 V rated power MOSFET, called \"VLMOS (vertical LOCOS MOSFET)\", and investigated characteristics of the VLMOS under high temperature. From simulation and experimental results, we verified that it overcame the \"Si limit\" and had superior temperature characteristics in specific on-resistance. This means that the VLMOS is excellent for wide-temperature range operations, especially for automotive applications.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.239756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
In this paper, we proposed a new 100 V rated power MOSFET, called "VLMOS (vertical LOCOS MOSFET)", and investigated characteristics of the VLMOS under high temperature. From simulation and experimental results, we verified that it overcame the "Si limit" and had superior temperature characteristics in specific on-resistance. This means that the VLMOS is excellent for wide-temperature range operations, especially for automotive applications.