Use of accurate MOS models for optimizing resonant converter designs

G. A. Franz, J. Walden, R. S. Scott, W. Bicknell, R. Steigerwald
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引用次数: 3

Abstract

AC and DC power MOSFET models for the design of resonant power converters are described. The influence of device parameters on the circuit performance is investigated in detail. A 1 MHz resonant converter circuit is simulated, and circuit waveforms are shown to agree with breadboard measurements with a high level of accuracy. Thus, design optimization can be performed through simulations without the need of breadboard iterations.<>
使用精确的MOS模型优化谐振变换器设计
介绍了用于谐振功率变换器设计的交流和直流功率MOSFET模型。详细研究了器件参数对电路性能的影响。对1 MHz谐振变换器电路进行了仿真,结果表明电路波形与面包板测量结果一致,具有较高的精度。因此,设计优化可以通过模拟来执行,而不需要面包板迭代
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