Use of accurate MOS models for optimizing resonant converter designs

Abstract

AC and DC power MOSFET models for the design of resonant power converters are described. The influence of device parameters on the circuit performance is investigated in detail. A 1 MHz resonant converter circuit is simulated, and circuit waveforms are shown to agree with breadboard measurements with a high level of accuracy. Thus, design optimization can be performed through simulations without the need of breadboard iterations.<>