A 220 GHz Sliding-IF Quadrature Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe BiCMOS

Abstract

Due to the increasing demand for high-data-rate transmission in wireless communication, the terahertz (THz) and sub-terahertz (sub-THz) frequency bands have attracted great attention for their rich spectrum resources. Silicon-based technologies with high $f_{T}/f_{\max}$ provide a low-cost solution to integrate the transmitters and receivers for sub-THz communication systems [1]–[4].