Experimental Efficiency and Thermal Parameters Evaluation in Full-SiC Quasi-Z-Source Inverter

Abstract

The paper presents results of the experimental investigation of full-SiC quasi-z-source (QZS) inverter. The study is devoted to a single-phase dc-ac solution which comprises SiC diode and SiC MOSFETs and demonstrates 97.1% efficiency. The experimental results that confirm efficient performance of the converter were presented and discussed. Due to its high efficiency and safe operation under high semiconductor devices temperatures the developed solution is feasible for PV applications. CEC efficiency characteristic was measured. The temperature behavior of semiconductors and heatsinks was investigated and detailed results were presented. The study aimed 1.8 kW as nominal power, however inverter was verified for secure operation and demonstrated acceptable efficiency for up to +33% from nominal power.