A novel base current phenomenon in SiGe HBTs operating in inverse mode

ESSDERC 2007 - 37th European Solid State Device Research Conference Pub Date : 2007-09-01 DOI:10.1109/ESSDERC.2007.4430950

A. Appaswamy, J. Cressler, G. Niu

引用次数: 3

Abstract

The inverse mode operation of SiGe HBTs down to cryogenic temperatures is examined for the first time. A novel base current "flattening" is observed at low temperatures, and the physics behind this unusual current-gain enhancing behavior is examined in detail using a combination of measurement and TCAD simulations.

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在反向模式下工作的SiGe HBTs中的一种新的基极电流现象

首次研究了低温下SiGe hbt的逆模操作。在低温下观察到一种新颖的基极电流“平坦化”，并且使用测量和TCAD模拟的结合详细检查了这种不寻常的电流增益增强行为背后的物理原理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ESSDERC 2007 - 37th European Solid State Device Research Conference

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