Global modeling of multifinger MOSFETs with SB-SP combined analysis

Abstract

The frequency-domain Spectral Balance technique has been demonstrated to be a viable alternative to the mixeddomain Harmonic Balance technique. In this work a frequencydomain Fourier series expansion and space-domain polynomial expansion of the physical quantities inside the semiconductor for the solution of steady-state nonlinear differential equations is applied to the physical analysis of multifinger MOSFET devices in linear and nonlinear regime and coupled to a commercial electromagnetic solver. The method allows a really fast CAD analysis both in DC and RF periodic regime especially when global modeling is required. A quasi-2D hydrodynamic formulation is given for a 0.35µm gate length with 10µm periphery three finger MOSFET; results are compared to those of a standard physical time-domain, a Harmonic Balance and Spectral Balance for time comparison. Moreover S-parameter comparisons with a commercial CAD tools with a compact model for circuit analysis are also given.