A 1V 2.4GHz CMOS power amplifier with integrated diode linearizer

The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings. Pub Date : 2004-12-06 DOI:10.1109/APCCAS.2004.1412703

Kun-Yi Lin, R. Weng, C. Hsiao, H. Wei

引用次数: 2

Abstract

A low voltage CMOS power amplifier with integrated diode linearization technique is proposed. It is designed for 2.4 GHz Bluetooth applications. The power amplifier is simulated with UMC 0.18/spl mu/m CMOS technology. Under 1V supply voltage, PA can deliver 20 dBm output power with 51% power-added-efficiency. At 2.4 GHz, the reverse isolation coefficient S12 is -27.5 dB.

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集成二极管线性化器的1V 2.4GHz CMOS功率放大器

提出了一种集成二极管线性化技术的低压CMOS功率放大器。它专为2.4 GHz蓝牙应用而设计。采用UMC 0.18/spl mu/m CMOS技术对功率放大器进行仿真。在1V电源电压下，PA输出功率为20dbm，加电效率为51%。在2.4 GHz时，反向隔离系数S12为-27.5 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.

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