Preparation and Magnetic Properties of Fe Doped Zno Thin Films with Dilute Magnetic Semiconductors

Abstract

Fe doped ZnO solid solution and its semiconductor thin films were prepared by sol-gel method. After aging and quenching, the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The elemental proportion was obtained by energy dispersive spectrometer (EDS) and the magnetic properties were measured by magnetic force microscope (MFM). The results show that iron doping can inhibit the growth of zinc oxide particles, and then increase the roughness of thin films. The results of MFM show that Fe doping can make non-magnetic ZnO semiconductors become dilute magnetic semiconductors. With the increasing amount of Fe doping, the distribution of magnetic domains and magnetic moments becomes more obvious.