Millimeter-wave Power Meter using Perfect Absorber via a Multi-layer Structure

Abstract

A millimeter-wave power meter using a perfect absorber is designed. The power sensor consisted of a highly-doped silicon absorption substrate with a multi-layer anti-reflection structure, is fabricated with the graded-index mechanism. Using differently doped silicon wafers can tune the transmissivity of each layer, which brings conductivity changing gradually from 1S/m to 4000S/m. The EM simulation results demonstrate that absorption above 99% can be achieved from 75GHz to 220GHz.