A new approach to a GaAs/AlGaAs optical neurochip with three layered structure

J. Ohta, M. Takahashi, Y. Nitta, S. Tai, K. Mitsunaga, K. Kyuma
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引用次数: 14

Abstract

A GaAs/AlGaAs optical synaptic interconnection device for neural networks is reported. It consists of a light-emitting-diode array, an interconnection matrix, and a photodiode array, which are integrated in a hybrid-layered structure on a GaAs substrate. The device structure and characteristics are reported. The fabricated device can simulate a 32-neuron system. The experimental results for a Hopfield associative memory with three stored vectors are described.<>
一种三层结构GaAs/AlGaAs光学神经芯片的新方法
报道了一种用于神经网络的GaAs/AlGaAs光突触互连装置。它由一个发光二极管阵列、一个互连矩阵和一个光电二极管阵列组成,它们集成在GaAs衬底上的混合层状结构中。报道了该装置的结构和特点。该装置可以模拟32个神经元系统。本文描述了一种具有三个存储向量的Hopfield联想存储器的实验结果
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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