A high linear upconversion mixer and VCO design using fully integrated current injection technique

Min-jeong Kim, Nam-Young Kim
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Abstract

An InGaP/GaAs HBT upconversion mixer and VCO is designed by current injection and harmonic noise frequency filtering technique to improve linearity and phase noise performance. The VCO which is combined with mixer, is designed and fabricated with low phase noise of -133.96 dBc/Hz at 1 MHz offset. Since VCO output and mixer input impedances are matched to 50Omega, there is no need an extra matching circuit. The measured conversion gain of the upconversion mixer is 0 dB. It shows the effective gain flatness of 1.2 dB from 1.6 GHz to 1.8 GHz. Also, it has third-order input intercept point (IIP3) of +18 dBm, and a third-order output intercept point (OIP3) of +19.2 dBm. An integrated differential cascode output amplifier generates the input and output-referred 1-dB compression point (PldB) as 1 dBm and 1.2 dBm. The high linearity mixer-VCO is fabricated within a total chip area of 2560 x 900 mum.
采用完全集成的电流注入技术的高线性上变频混频器和压控振荡器设计
采用电流注入和谐波噪声频率滤波技术设计了InGaP/GaAs HBT上变频混频器和压控振荡器,提高了其线性度和相位噪声性能。设计并制作了与混频器相结合的压控振荡器,在1 MHz偏移时相位噪声为-133.96 dBc/Hz。由于VCO输出和混频器输入阻抗匹配为50Omega,因此不需要额外的匹配电路。上变频混频器的测量转换增益为0 dB。在1.6 GHz ~ 1.8 GHz范围内,有效增益平坦度为1.2 dB。此外,它的三阶输入截距点(IIP3)为+18 dBm,三阶输出截距点(OIP3)为+19.2 dBm。集成差分级联码输出放大器产生输入参考和输出参考的1- db压缩点(PldB)分别为1 dBm和1.2 dBm。高线性混合器-压控振荡器的总芯片面积为2560 x 900 μ m。
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