Advanced RDL Interposer PKG Technology for Heterogeneous Integration

Jae-gwon Jang, Kyoung-Lim Suk, S. Lee, Jinha Park, Gwang-jae Jeon, Jung-ho Park, Jeong-gi Jin, Su-chang Lee, Gyoung-bum Kim, Joonhyuk Choi, Dae-woo Kim, D. Oh, Won-Kyoung Choi
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引用次数: 4

Abstract

As faster data processing and communication gets more demanded for Data Center/Cloud, HPC (High Performance Computing), AI (Artificial Intelligence) accelerator and Network markets, HBM (High Bandwidth Memory) becomes main memory type to meet the required bandwidth performance. HBM integration with logic dies in a system level has been developed on 2.5D SiP (System in Package) Platform with Si Interposer having TSV (Through Silicon Vias) of which fabrication cost is rather high. Therefore, as the low cost solution, alternative 2.5D SiP Platform approaches such as Organic Interposer using Redistribution Layer (RDL) and Glass Interposer have recently been reported. In this paper, RDL Interposer package with 4 HBM and 1 logic is demonstrated as 2.5D package platform based on RDL-First Fan-out Wafer Level Package (FOWLP). The effect of RDL design factors on electrical performances is investigated using the eye diagram method and fine pitch multi-layer RDL structure (2um L/S RDL, 4 Layers) is designed accordingly. Fine pitch RDL process is established followed by the wafer level and unit level assembly processes and RDL Interposer package is confirmed to meet all the reliability requirements.
面向异构集成的先进RDL Interposer PKG技术
随着数据中心/云、HPC(高性能计算)、AI(人工智能)加速器和网络市场对更快的数据处理和通信的需求越来越高,HBM(高带宽内存)成为满足带宽性能要求的主要内存类型。在具有TSV (Through Silicon Vias)的Si Interposer的2.5D SiP (system in Package)平台上开发了系统级HBM集成逻辑芯片,其制造成本相当高。因此,作为低成本的解决方案,替代的2.5D SiP平台方法,如使用再分配层(RDL)的有机中间层和玻璃中间层,最近被报道。本文以RDL- first扇出晶圆级封装(FOWLP)为基础,以4 HBM和1逻辑的RDL Interposer封装为2.5D封装平台。采用眼图法研究了RDL设计因素对电性能的影响,并据此设计了细间距多层RDL结构(2um L/S RDL, 4层)。建立了小间距RDL工艺,随后进行了晶圆级和单元级组装工艺,并确认了RDL Interposer封装满足所有可靠性要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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