Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates

Abstract

The hole inversion layer mobility of in-plane uniaxially strained Si is modeled by a microscopic approach. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6 times 6 koarr ldr poarr Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of relaxed Si on (001) Si wafers. The calibrated model reproduces available channel mobility measurements for unstrained and uniaxially strained Si on (001), (111) and (110) substrates.