Design of Silicon On-Wafer Sub-THz Calibration Kit

2017 Mediterranean Microwave Symposium (MMS) Pub Date : 2017-11-28 DOI:10.1109/MMS.2017.8497073

M. Deng, S. Frégonèse, D. Céli, P. Chevalier, M. De matos, T. Zimmer

引用次数: 9

Abstract

On-wafer TRL calibration kits were developed in STMicroelectronics BiCMOS55 technology. Standard straight lines and meander lines topologies were investigated and compared together through a SiGe HBT characterization up to 220 GHz.

查看原文本刊更多论文

片上硅亚太赫兹校准套件的设计

晶圆上TRL校准套件采用意法半导体BiCMOS55技术开发。通过高达220 GHz的SiGe HBT表征，研究并比较了标准直线和弯曲线拓扑结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2017 Mediterranean Microwave Symposium (MMS)

自引率

0.00%

发文量