Advanced ECL with new active pull-down emitter-followers

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51036

H. Itoh, T. Saitoh, T. Yamada, M. Yamamoto, A. Masaki

引用次数: 16

Abstract

Approaches to high-speed and high-load driving capability of bipolar logic gates are discussed. Several circuits are investigated. It is shown that the Emitter Coupled Logic (ECL) with FET pull-down emitter-followers has a 3-5 times greater capability of driving capacitive loads than the conventional one. The performance improvement is drastically enhanced when applied to GaAs LSIs.<>

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先进的ECL与新的主动下拉发射器跟踪器

讨论了实现双极逻辑门高速、高负载驱动能力的途径。研究了几种电路。结果表明，具有场效应管下拉发射极跟随器的发射极耦合逻辑(ECL)驱动电容性负载的能力比传统的高3-5倍。当应用于GaAs lsi时，性能改进大大增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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