High voltage lateral MOS thyristor cascode switch on SOI-safe operating area of SOI-Resurf devices

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509458

H. Funaki, N. Yasuhara, A. Nakagawa

引用次数: 2

Abstract

A high voltage lateral MOS thyristor cascode switch on SOI was proposed. It consists of a high voltage MOS thyristor, a low voltage MOSFET and a pn diode. Excellent on-state and switching characteristics were numerically and experimentally obtained. The safe operating area (SOA) of SOI-Resurf devices were discussed.

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高压横向MOS晶闸管级联开关在soi -安全工作区域的soi - reff器件

提出了一种基于SOI的高压横向MOS晶闸管级联开关。它由一个高压MOS晶闸管、一个低压MOSFET和一个pn二极管组成。通过数值和实验得到了优异的通状态和开关特性。讨论了soi - reff设备的安全工作区域(SOA)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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