First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

2015 IEEE Photonics Conference (IPC) Pub Date : 2015-11-12 DOI:10.1109/IPCON.2015.7323633

M. A. Majid, A. Al-Jabr, H. Oubei, M. Alias, T. Ng, D. Anjum, B. Ooi

引用次数: 3

Abstract

We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ~4.5mW which is the highest ever reported power on this material system at room-temperature.

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首次展示了基于InGaP/InAlGaP的608nm橙色激光器和583nm黄色超发光二极管

本文报道了基于InGaP/InAlGaP的橙色半导体激光器(OSL)和黄色超发光二极管(YSLD)的首次演示，发光波长分别为608nm和583nm。YSLD的总输出功率为~4.5mW，是该材料系统在室温下的最高输出功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE Photonics Conference (IPC)

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