Experimental Characterisation of Drift on ISFET Arrays and its pH Dependence

Costanza Gulli, Nicolas Moser, P. Georgiou
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Abstract

This paper presents an experimental characterisation of the pH dependence of drift on ISFET sensors. Experiments are run on an array of over 4000 sensors fabricated in commercial CMOS technology with pH buffer solutions of known pH. A mathematical model is built and the fitted coefficients are compared between experiments where the pH is constant and where pH changes. An exponential and a linear model are compared, as well as different metrics for coefficient comparison. It is shown that a dependence can be found between drift and pH variation when drift rate exceeds $15\mu V/s$. This serves as a first step towards the development of a new metric to aid classification of nucleic acid amplification experiments.
ISFET阵列漂移的实验表征及其pH依赖性
本文给出了漂移对ISFET传感器pH依赖性的实验表征。实验在超过4000个传感器阵列上进行,这些传感器采用商用CMOS技术制造,pH缓冲溶液为已知pH。建立数学模型,并比较pH恒定和pH变化实验的拟合系数。比较了指数模型和线性模型,以及系数比较的不同度量。结果表明,当漂移速率超过$15\mu V/s$时,漂移与pH变化之间存在相关性。这是朝着开发一种有助于核酸扩增实验分类的新指标迈出的第一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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