A Planar Single-ended Kilowatt-level VHF Class E Power Amplifier

Abstract

This paper demonstrates a high-efficiency kilowatt-level Class E RF power amplifier which is designed as RF source for particle accelerator energy systems. Class E method of switch mode feathers is employed here to improve efficiency for such high power kilowatts PA in a single chip. It uses a powerful LDMOS-transistor in a single-ended design and provides 1200 W peak power with 83% drain efficiency and 19.9 dB gain at 100 MHz operation. In addition it provides 1010 W peak power with 87% drain efficiency and 20.4 dB gain at 102 MHz operation. All measurements were performed in pulsed operation with a 5% duty cycle, 3.5 ms pulse at 14 Hz repetition. According to the authors’ knowledge, this kilowatts power amplifier adopted Class E method is reported at first time in this field.