Nondestructive RBSOA characterization of IGBTs and MCTs

Abstract

Nondestructive evaluations of IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controller thyristors) are discussed and their corresponding RBSOAs established. Test results are presented for a variety of commercial devices at different temperatures. It was observed that, compared to BJTs (bipolar junction transistors), IGBTs and MCTs exhibit very different turn-off breakdown characteristics. Avalanche breakdown of the parasitic transistor accounts for the loss of dynamic voltage blocking capability of both IGBTs and MCTs.<>