Design and Performance of High-speed Low-Offset CMOS Double-Tail Dynamic Comparators using Offset Control scheme

Avaneesh K. Dubey, P. K. Pal, Vikrant Varshney, Ankur Kumar, R. Nagaria
{"title":"Design and Performance of High-speed Low-Offset CMOS Double-Tail Dynamic Comparators using Offset Control scheme","authors":"Avaneesh K. Dubey, P. K. Pal, Vikrant Varshney, Ankur Kumar, R. Nagaria","doi":"10.1109/IEMECONX.2019.8876979","DOIUrl":null,"url":null,"abstract":"This paper addresses novel design of complementary metal oxide semiconductor (CMOS) Double tail dynamic comparators (DoTDCs) using offset control scheme. The offset control scheme adopted the phenomena of time-domain bulk-tuning to input transistors. The modification in offset control scheme and comparator core is done to reduce leakage through the bulk node and other issue noticed in design. The novel phase detector and charge pump are also proposed for high-speed, low power. Based on the proposed phase detector and charge pump, offset control scheme is designed, and using this two different DoTDCs, named as DoTDC-I and DoTDC-II are proposed. To verify the outcomes, they are simulated in SPECTRE at 0.8V of the supply voltage at 45nm CMOS technology node. Monte-Carlo simulation is done to obtain the offset voltage. The result shows that the offset-voltage is reduced from 1.608mV to 0.911mV in DoTDCI and from 1.694mV to 1.426mV in DoTDC-II structures using said control scheme.","PeriodicalId":358845,"journal":{"name":"2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMECONX.2019.8876979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

This paper addresses novel design of complementary metal oxide semiconductor (CMOS) Double tail dynamic comparators (DoTDCs) using offset control scheme. The offset control scheme adopted the phenomena of time-domain bulk-tuning to input transistors. The modification in offset control scheme and comparator core is done to reduce leakage through the bulk node and other issue noticed in design. The novel phase detector and charge pump are also proposed for high-speed, low power. Based on the proposed phase detector and charge pump, offset control scheme is designed, and using this two different DoTDCs, named as DoTDC-I and DoTDC-II are proposed. To verify the outcomes, they are simulated in SPECTRE at 0.8V of the supply voltage at 45nm CMOS technology node. Monte-Carlo simulation is done to obtain the offset voltage. The result shows that the offset-voltage is reduced from 1.608mV to 0.911mV in DoTDCI and from 1.694mV to 1.426mV in DoTDC-II structures using said control scheme.
基于偏置控制的高速低偏置CMOS双尾动态比较器的设计与性能
本文介绍了利用偏移控制方案设计互补金属氧化物半导体(CMOS)双尾动态比较器(dotdc)的新方法。偏置控制方案采用了输入晶体管的时域体积调谐现象。对偏置控制方案和比较器核心进行了修改,以减少通过大节点的泄漏和设计中注意的其他问题。同时提出了高速、低功耗的新型鉴相器和电荷泵。基于所提出的鉴相器和电荷泵,设计了偏移控制方案,并利用该方案提出了DoTDC-I和DoTDC-II两种不同的dotdc。为了验证结果,在45纳米CMOS技术节点上,在0.8V的电源电压下,在SPECTRE中进行了仿真。通过蒙特卡罗仿真得到了偏置电压。结果表明,采用该控制方案,DoTDCI结构的偏置电压从1.608mV降低到0.911mV, DoTDC-II结构的偏置电压从1.694mV降低到1.426mV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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