Synthesis and gas sensing properties of MoO3 thin films by spray pyrolysis

D. V. Ahire, G. Jain
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Abstract

MoO3 thin films have been prepared by a simple spray pyrolysis technique at substrate temperature 250°C. The structure and morphology of thin films are characterized by X-ray powder diffraction (XRD), scanning electron microscopy and UV-vis spectroscopy. The gas sensing properties of MoO3 thin film is studied at gas concentration 400 ppm and working temperature of 100–400 °C. It was found that the sensitivity depended on the working temperatures and also H2S gas concentration. The results show that the MoO3 thin film can be used to fabricate high performance H2S gas sensors.
喷雾热解制备MoO3薄膜及其气敏性能
在衬底温度为250℃的条件下,采用简单的喷雾热解技术制备了MoO3薄膜。采用x射线粉末衍射(XRD)、扫描电镜和紫外可见光谱对薄膜的结构和形貌进行了表征。在气体浓度为400 ppm、工作温度为100-400℃的条件下,研究了MoO3薄膜的气敏性能。结果表明,灵敏度与工作温度和H2S气体浓度有关。结果表明,MoO3薄膜可用于制作高性能H2S气体传感器。
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