Impact of application of SiC devices in motor drive on EMI

Zhihao Fang, Dong Jiang, Zewei Shen, R. Qu
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引用次数: 25

Abstract

This paper gives a study on the EMI noise problem of motor drives, especially the impact of application of fast-switching SiC devices. First, the noise source model has been analyzed and the two major factors: device switching action and inverter switching frequency have been claimed. Device switching performance analysis has been done to show that the fast switching speed will generate bigger EMI noise at EMI high frequency range, ringing in the device switching can worsen the EMI noise near the ringing frequency, too. In the meantime, increasing of switching frequency of inverter can bring bigger EMI noise at EMI low frequency range. With variable switching frequency, EMI peak value can be reduced for the motor drive. But the average EMI of SiC motor drive is still bigger than Si motor drive which is with lower average switching frequency. The analysis has been supported by experimental results. The challenge of EMI should be considered for motor drive with SiC devices for advanced applications.
SiC器件在电机驱动中的应用对电磁干扰的影响
本文研究了电机驱动的电磁干扰噪声问题,特别是快速开关SiC器件的应用对电机驱动的影响。首先,分析了噪声源模型,提出了器件开关动作和逆变器开关频率两个主要因素。对器件开关性能的分析表明,在电磁干扰高频范围内,快速的开关速度会产生较大的电磁干扰噪声,器件开关中的振铃也会使振铃频率附近的电磁干扰噪声恶化。同时,逆变器开关频率的增加会在电磁干扰低频范围内带来较大的电磁干扰噪声。通过可变开关频率,可以降低电机驱动的电磁干扰峰值。但SiC电机驱动的平均电磁干扰仍大于平均开关频率较低的Si电机驱动。该分析得到了实验结果的支持。对于先进应用的SiC电机驱动,应考虑电磁干扰的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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